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4Mb Parallel Memory IC Chip Low Standby Power 7mW CMOS Standby IS61WV25616BLL-10TLI

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4Mb Parallel Memory IC Chip Low Standby Power 7mW CMOS Standby IS61WV25616BLL-10TLI

China 4Mb Parallel Memory IC Chip Low Standby Power 7mW CMOS Standby IS61WV25616BLL-10TLI supplier

Large Image :  4Mb Parallel Memory IC Chip Low Standby Power 7mW CMOS Standby IS61WV25616BLL-10TLI

Product Details:

Place of Origin: Original
Brand Name: Original Manufacturer
Certification: Rosh
Model Number: IS61WV25616BLL-10TLI

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: Negotiation
Packaging Details: Original Packing
Delivery Time: In stock
Payment Terms: TT, Paypal, Western Union And So On
Supply Ability: 80000
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Detailed Product Description
Part Status: Active Memory Type: Volatile
Memory Format: SRAM Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K X 16) Write Cycle Time - Word, Page: 10ns
Access Time: 10ns Memory Interface: Parallel

 

IS61WV25616BLL-10TLI Memory IC Chip SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II

 

FEATURES

HIGH SPEED: (IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical) CMOS standby

LOW POWER: (IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

• Low Standby Power: 0.6 mW (typical) CMOS standby

• Single power supply

— VDD 1.65V to 2.2V (IS61WV25616Axx)

— VDD 2.4V to 3.6V (IS61/64WV25616Bxx)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

DESCRIPTION

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx

are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable pro- cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de- vices.

 

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

 

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

 

The IS61WV25616Axx/Bxx and IS64WV25616Bxx are packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 3.3V + 5%

 

Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage   2 VDD + 0.3 V
VIL Input LOW Voltage(1)   –0.3 0.8 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

 

 

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 2.4V-3.6V

 

Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –1.0 mA 1.8 V
VOL Output LOW Voltage VDD = Min., IOL = 1.0 mA 0.4 V
VIH Input HIGH Voltage   2.0 VDD + 0.3 V
VIL Input LOW Voltage(1)   –0.3 0.8 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

 

 

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 1.65V-2.2V

 

Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH Output HIGH Voltage IOH = -0.1 mA 1.65-2.2V 1.4 V
VOL Output LOW Voltage IOL = 0.1 mA 1.65-2.2V 0.2 V
VIH Input HIGH Voltage   1.65-2.2V 1.4 VDD + 0.2 V
VIL(1) Input LOW Voltage   1.65-2.2V –0.2 0.4 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

AC TEST CONDITIONS

 

Parameter Unit Unit Unit
  (2.4V-3.6V) (3.3V +10%) (1.65V-2.2V)
InputPulseLevel 0Vto3V 0Vto3V 0Vto1.8V
Input Rise and Fall Times 1V/ ns 1V/ ns 1V/ ns
InputandOutputTiming andReferenceLevel(VRef) 1.5V 1.5V 0.9V
OutputLoad See Figures 1 and 2 See Figures 1 and 2 See Figures 1 and 2

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