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N - Channel IC Electrical Component , Digital Integrated Electronics IRFP250NPBF

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N - Channel IC Electrical Component , Digital Integrated Electronics IRFP250NPBF

China N - Channel IC Electrical Component , Digital Integrated Electronics IRFP250NPBF supplier

Large Image :  N - Channel IC Electrical Component , Digital Integrated Electronics IRFP250NPBF

Product Details:

Place of Origin: Original
Brand Name: Original Manufacturer
Certification: Rosh
Model Number: IRFP250NPBF

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: Negotiation
Packaging Details: Original Packing
Delivery Time: In stock
Payment Terms: TT, Paypal, Western Union And So On
Supply Ability: 80000
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Detailed Product Description
Part Status: Active FET Type: N-Channel
Technology: MOSFET (Metal Oxide) Drain To Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V

 
IRFP250NPBF Transistor IC Chip N-Channel 200V 30A (Tc) 214W (Tc) Through Hole TO-247AC

 

Part Status

Active

 

FET Type

N-Channel

 

Technology

MOSFET (Metal Oxide)

 

Drain to Source Voltage (Vdss)

200V

 

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

 

Drive Voltage (Max Rds On, Min Rds On)

10V

 

Vgs(th) (Max) @ Id

4V @ 250µA

 

Gate Charge (Qg) (Max) @ Vgs

123nC @ 10V

 

Vgs (Max)

±20V

 

Input Capacitance (Ciss) (Max) @ Vds

2159pF @ 25V

 

FET Feature

-

 

Power Dissipation (Max)

214W (Tc)

 

Rds On (Max) @ Id, Vgs

75 mOhm @ 18A, 10V

 

Operating Temperature

-55°C ~ 175°C (TJ)

 

Mounting Type

Through Hole

 

Supplier Device Package

TO-247AC

 

Package / Case

TO-247-3

 
• Advanced Proceçç Technology
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Façt Switching
• Fully Avalanche Rated
• Eaçe of Paralleling
• Simple Drive Requirementç
• Lead-Free
 
 
Fifth Generation HEXFETç from International Rectifier utilize advanced proceççing techniqueç to achieve extremely low on-reçiçtance per çilicon area. Thiç benefit, combined with the façt çwitching çpeed and ruggedized device deçign that HEXFET Power MOSFETç are well known for, provideç the deçigner with an extremely efficient and reliable device for uçe in a wide variety of applicationç.
 
The TO-247 package iç preferred for commercial-induçtrial applicationç where higher power levelç preclude the uçe of TO-220 deviceç. The TO-247 iç çimilar but çuperior to the earlier TO-218 package becauçe of itç içolated mounting hole.
 

 

 

Parameter

Max.

Units

ID @ TC = 25°C

Continuouç Drain Current, VGS @ 10V

30

 
A

ID @ TC = 100°C

Continuouç Drain Current, VGS @ 10V

21

IDM

Pulçed Drain Current º

120

PD @TC = 25°C

Power Diççipation

214

W

 

Linear Derating Factor

1.4

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulçe Avalanche Energyº

315

mJ

IAR

Avalanche Currentº

30

A

EAR

Repetitive Avalanche Energyº

21

mJ

dv/dt

Peak Diode Recovery dv/dt ©

8.6

V/nç

TJ
TSTG

Operating Junction and
Storage Temperature Range

-55 to +175

 
°C

 

Soldering Temperature, for 10 çecondç

300 (1.6mm from caçe )

 

Mounting torque, 6-32 or M3 çrew

10 lbf•in (1.1N•m)

 

 
 

 

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Caçe

–––

0.7

 
°C/W

RqCS

Caçe-to-Sink, Flat, Greaçed Surface

0.24

–––

RqJA

Junction-to-Ambient

–––

40

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