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625mW Power Max Transistor IC Chip PNP Transistor Type 2N3906 200mA Current Collector

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625mW Power Max Transistor IC Chip PNP Transistor Type 2N3906 200mA Current Collector

China 625mW Power Max Transistor IC Chip PNP Transistor Type 2N3906 200mA Current Collector supplier

Large Image :  625mW Power Max Transistor IC Chip PNP Transistor Type 2N3906 200mA Current Collector

Product Details:

Place of Origin: Original
Brand Name: Original Manufacturer
Certification: RoHS
Model Number: 2N3906

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: Negotiation
Packaging Details: Original Packing
Delivery Time: In stock
Payment Terms: TT, Paypal, Western Union And So On
Supply Ability: 80000
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Detailed Product Description
Part Status: Active Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 625mW

 
2N3906 Transistor IC Chip Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3

 

Part Status Active  
Transistor Type PNP  
Current - Collector (Ic) (Max) 200mA  
Voltage - Collector Emitter Breakdown (Max) 40V  
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA  
Current - Collector Cutoff (Max) -  
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V  
Power - Max 625mW  
Frequency - Transition 250MHz  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Through Hole  
Package / Case TO-226-3, TO-92-3 (TO-226AA)  
Supplier Device Package TO-92-3  
Base Part Number 2N3906

 

MAXIMUM RATINGS
 

Rating Symbol Value Unit
Collector– Emitter Voltage VCEO 40 Vdc
Collector– Base Voltage VCBO 40 Vdc
Emitter– Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC 200 mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C PD

625

5.0

mW mW/°C
Total Power Dissipation @ TA = 60°C PD 250 mW
Total Device Dissipation @ TC = 25°C Derate above 25°C PD

1.5

12

Watts mW/°C
Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C

THERMAL CHARACTERISTICS(1)
 

Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R JA 200 ° C/W
Thermal Resistance, Junction to Case R JC 83.3 ° C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

 

Collector– Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 Vdc
Collector– Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 40 Vdc
Emitter– Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL 50 nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX 50 nAdc

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.

Contact Details
Shenzhen Goldensun Electronics Technology Limited

Contact Person: Cary

Tel: +8613760106370

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